PART |
Description |
Maker |
GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT25G101SM06 GT25G101SM |
SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
GT25G101SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT15G101 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT25G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT20G101SM E001913 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
CY25AAJ-8 CY25AAJ-8F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Nch IGBT for STROBE FLASHER
|
Mitsubishi Electric Corporation POWEREX [Powerex Power Semiconductors] POWEREX[Powerex Power Semiconductors]
|
MG400J2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT From old datasheet system
|
Toshiba Semiconductor
|
CT30TM-8 |
128 x 64 pixel format, LED Backlight available 130 A, 400 V, N-CHANNEL IGBT, TO-220F MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors] Mitsubishi Electric Corporation
|
MG150J1BS11 E002085 |
Silicon N channel IGBT(N娌??缁?????????朵?绠? From old datasheet system N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) Silicon N channel IGBT(N沟道绝缘栅双极型晶体
|
Toshiba Semiconductor Toshiba Corporation
|
RJH60D1DPE-00-J3 RJH60D1DPE |
16 A, 600 V, N-CHANNEL IGBT SC-83, LDPAK-3 Silicon N Channel IGBT Application: Inverter
|
Renesas Electronics Corporation
|
RJP4301APP09 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|